预处理蓝宝石衬底上生长高质量GaN显示薄膜(英文)

High Quality GaN Display Films Growth on Pre-Treated Sapphire Substrate

采用化学方法腐蚀部分c-面蓝宝石衬底,在腐蚀区域形成一定的图案,利用LP-MOCVD在此经过表面处理的蓝宝石衬底上外延生长GaN薄膜。采用高分辨率双晶X射线衍射(DCXRD)、光致发光光谱(PL)、透射光谱分析GaN薄膜的晶体质量和光学质量。分析结果表明,GaN薄膜透射谱反映出的GaN质量与X射线双晶衍射测量的结果一致,即透射率越大,半高宽越小,结晶质量越好;对蓝宝石衬底进行前处理可以大大改善GaN薄膜的晶体质量和光学质量,其(0002)面及(102)面XRD半高宽(FWHM)分别降低到208.80arcsec及320.76arcsec ,而且其光致发光谱中的黄光带几乎可以忽略。

Etch pits on sapphire substrate surface are formed after surface treating. GaN films have been grown by LP-MOCVD on the sapphire substrate, which a half of it is pretreated by chemical etch. The crystal quality and optical quality of GaN films are analyzed by high-resolution double crystal X-ray rocking curve （XRC） and optical transmission measurement. These results indicate that the crystal quality of GaN determined by transmission measurement is in agreement with that determined by XRC, that the （0002） plane and （10^-12） plane full-width at half-maximum by XRC of GaN films grown on pre-treated sapphire substrate are as low as 208. 80arcsec and 320. 76acrsec, respectively. The transmission spectrum of GaN is studied to assess the crystal and optical quality. The epilayer grown on pre-treated sapphire substrate exhibits excellent optical quality, in which the yellow luminescence （YL） is nearly invisible in the photoluminescence （PL） spectrum. The epilayer grown on the pre-treated sapphire substrate exhibits superior optical properties and crystal properties, in which the higher transmission ratio and the greater modulation depth can be shown in the transmission spectrum.