基于P-Type多晶硅TFT技术的集成型有源OLED驱动电路(英文)

An Integrated Driving Circuitry by Employing P-Type Poly-Si TFTs for AMOLED

低温多晶硅(LTPS:Low-temperature poly-Si)技术已经成为薄膜晶体管(TFT:thin film transistor)制作中最具吸引力的技术,并应用在AMOLED显示器中。P-type技术能够简化TFT的制作过程。本文提出了一种应用p-type多晶硅TFT的AMOLED驱动电路结构,包括栅极驱动器、数据驱动器以及像素阵列。数据驱动器采用分块方法,使得显示屏的输出线数大大减少。作者采用一种改进的p-type移位寄存器实现逐行选通的功能,并采用由4个p-type反相器级联构成的缓冲器来提高电路的驱动能力。为了验证上述电路结构的正确性,作者采用HSPICE软件进行仿真分析。结果表明,电路工作正常。利用韩国汉城国立大学及Neo Poly公司在多晶硅制作方面的优势,我们已经合作完成了应用上述电路结构的分辨率为96×3×128的有源OLED的制作。

Low-temperature poly-Si （LTPS） is becoming an attracted technology for the fabrication of thin film transistors （TFTs） used in active matrix organic light emissive displays （AMOLED）. Because the TFT fabrication process can be simplified by p-type technology, an integrated driving circuitry employing only p-type poly-Si TFTs for AMOLED is proposed, including gate driver, data sampling driver and pixel array. The output pads of the panel are largely decreased by using a block sequential method. An improved p-type shift register is proposed to realize line-by-line selection. And a buffer which is made up of four p-type inverters is used to enhance the driving capability of the circuitry. In order to verify the validity of the proposed scheme, circuit simulation using HSPICE has been done. The simulation result indicated that the circuitry worked well. Utilizing the advantage of Korea Seoul National University and Neo Poly Inc on making poly-Si TFT, we have already fabricated 96 × 3 × 128 AMOLED using the design above.