摘要
通过金属有机化学气相沉积(MOCVD)方法生长ZnO薄膜。XRD测试显示出(002)晶面的强衍射峰,表明生长的ZnO薄膜是主度的c轴取向。基于ZnO薄膜基础,我们制备了ZnO基薄膜晶体管。
The ZnO films were deposited on the substrate of glass by MOCVD. The X-ray diffraction patterns of samples show sharp diffraction peaks ZnO（0 0 2）,indicating that the films were highly c-axis oriented. Based on the ZnO film,we fabricated ZnO thin film transistor（ZnO-TFT）.
出处
《电子器件》
CAS
2008年第1期115-116,共2页
Chinese Journal of Electron Devices
基金
NCET(No.05-0326,NSFC (No.60576054,60576043,60576056)
Jilin Univresity In-novation Foundation
project of Chang chun science and technology plans with contract number of 2006303
projects of Ministry of Construction
China and Department of Education of Jilin province
