氧化锌基薄膜晶体管制备与研究

The Fabrication and Study of ZnO-Based Thin Film Transistors

以玻璃为衬底,利用金属有机化学气相沉积( MOCVD)方法,在360℃附近实现ZnO薄膜的生长。利用ZnO为有源层制备底栅型薄膜晶体管。SiO2被用作栅绝缘材料以有效的抑制漏泄电流的产生,达到氧化锌薄膜晶体管(ZnO-TFT)成功运作目的。ZnO-TFT的电流开关(on/off)比达到104以上。ZnO-TFT在可见光区平均光透过率大约为80 %。以上表明利用ZnO替代传统Si材料作有源层材料制备透明薄膜晶体管是可能的。

Bottom-gate-type thin film transistors using ZnO as an active channel layer （ZnO-TF-TS） have been constructed. The ZnO layers were deposited using metal organic chemical vapor deposition（MOCVD） at about 360℃. SiO2 was used as the material of gate insulator to suppress the leakage current effectively and to enable the ZnO-TFT to operate successfully. The drain current on-to-off ratio of ZnO-TFTs fabricated on the substrate of glass is about 104. The average optical transmission of ZnO-TFTs in the visible portion is -80%. All above shows that it is possible to fabricate a transparent TFT using ZnO as an active channel layer instead of the traditional Si material.