期刊文献+

溶胶凝胶法制备的MgO粉末通过电子束蒸发形成作为绝缘体保护体应用在PDP领域的MgO薄膜 被引量:2

Nature of E-Beam Evaporated Thin Films of MgO from Sol-Gel Derived Powder for Dielectric Protection Application in Plasma Display Panels
下载PDF
导出
摘要 MgO优异的发射和保护性能会由于水吸附作用形成Mg(OH)2而变差。为了证明这一点,实验首先采用Sol-gel法合成了纯净的MgO粉末:将硝酸镁六水合物和草酸溶解在乙醇中形成凝胶体,接着将该凝胶体在100℃时烘24h以形成草酸镁,然后升温到600℃使之裂解,将其磨碎,再使用240mesh筛分,最后再在1000℃时烧结2h,形成MgO。该法制成的MgO在气压为10^-5mbar的气氛中通过电子束蒸发到玻璃衬底上形成薄膜。以上方法制成的MgO薄膜和在450℃直接退火的MgO薄膜在以下几点做了对比:(a)生长过程和结构;(b)表面形貌;(c)透光度;(d)OH键。以上对比结果表明前者:(i)具有fcc结构,其晶格常数a为4.216±0.005A,(ii)具有在〈100〉和〈110〉之间的择优取向。另外前者还有以下特征:(i)表面形貌呈锥柱状、(ii)可视光范围的高透光度(〉88-92%)、(iii)无OH键。此外,如果MgO薄膜的晶粒取向{100}和{110}之类的中性面,那么其水合作用就可以得到有效的控制。 The excellent emissive and protective properties of magnesium oxide are deteriorated by Mg (OH)2 formation through chemisorption of water. To address this issue, pure MgO powder has been first synthesized by a sol-gel process involving gel formation from solutions of magnesium nitrate hexahydrate and oxalic acid in ethanol, drying at 100℃ for 24 h to form magnesium oxalate dihydrate and decomposition at 600℃. The product is then subjected to grinding, sieving through a 240 mesh, pelletization and sintering at 1000℃ for 2 h. The resulting MgO target has then been used to prepare thin films over a glass substrate by e-beam evaporation under vacuum - 10^-5 mbar. The MgO films as such and after annealing at 450℃ have been characterized for (a) phase and preferred orientation, (b) surface morphology, (c) optical transmittance, and (d) OH bond. They are shown to (i) possess an f. c. c. (NaCl-type) structure with lattice parameter a - 4. 216± 0. 005A and (ii) have preferred orientation along 〈100〉 and 〈110〉. The films exhibit (i) pyramidal columnar morphology, (ii) high optical transmittance (〉 88-92%) in visible region, and (iii) no signature of -OH bond. Further the hydration is effectively controlled if neutral planes like {100} and {110} bound the grains of MgO films.
出处 《电子器件》 CAS 2008年第1期192-196,共5页 Chinese Journal of Electron Devices
基金 Acknowledgements One of the authors (AK) is thankful to the Council of Scientific and Industrial Research (CSIR), New Delhi, India for providing the research fellowship.
关键词 MGO 薄膜 绝缘体保护层 MgO Thin film Dielectric Protective Layer
  • 相关文献

参考文献27

  • 1Urade T, Iemori T, Osawa M, Nakayama N and Morita I, IEEE Trans. Electron Devices[J], 23, 1976, 313-318.
  • 2Tasker P W. J. Phys. C, Solid State Phys. [J], 12,1979,4977- 4984.
  • 3Scamehorn C A, Hess A C and McCarthy M I,. J. Chem. Phys. [J], 99, 1993, 2786-2795.
  • 4Aboelfotoh M O, Park K C and Pliskin W A, Appl J. Phys. [J], 48, 1977, 2910-2917.
  • 5Colin F J,Robyn A R,Rupert R, Robert L S, Roger St C S and Peter S T. J Chem. Soc. , Faraday Trans[J]. 1, 80, 1984, 2609-2617.
  • 6Coluccia S, Deane M and Tench A J, J. Chem. Soc., Faraday Trans[J]. 1,74,1978,2913-2922.
  • 7Park S Y, Lee M J,Kim H J,Moon S H,Kim S G and Kim J K,J. Vac. Sci. Technol. [J], A, 23, 2005, 1162-1166.
  • 8Joint Committee for Powder Diffraction Standards [S], File No. 45-0946.
  • 9Menon M and Bullard J W.J. Mater. Chem. [J],9,1999,949-953.
  • 10Joint Committee for Powder Diffraction Standards[S]. File No. 30-0794.

同被引文献15

引证文献2

二级引证文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部