摘要
采用射频磁控溅射法在Pt/TiO2/SiO2/Si(100)衬底上制备了Ba0.7Sr0.3TiO3薄膜,研究了工作气压、衬底温度等溅射参数对Ba0 .7Sr0.3Ti O3薄膜结构和电学性质的影响。使用XRD分析了工作气压为2Pa、衬底温度分别为200 ℃、400 ℃、600 ℃(组a) ,以及衬底温度为600 ℃、工作气压分别为1.5Pa、2.0Pa、2.5Pa、3.0Pa和5 .0Pa (组b)两组薄膜的微结构,结果表明工作气压在2.5Pa以下、衬底温度为600℃时沉积的薄膜具有较好的钙钛矿结构。在1.5Pa条件下溅射的薄膜具有明显的(111)择优取向。在2.5Pa时,Pt/Ba0.7Sr0.3TiO3/Pt电容有最优铁电性能,在外加4 V电压(电场为80 kV/cm)下,剩余极化(Pr)和矫顽场(Ec)分别为2.32μC/cm2、21.1 kV/cm。
The Ba0.7Sr0.3TiO3 thin films were prepared on a stabilized Pt/TiO2/SiO2/Si（100） substrate by RF-sputtering. The effect of working gas pressure and substrate temperature on structure and electrical properties of the Ba0.7Sr0.3TiO3 thin films were studied. The structure of the thin films deposited at the substrate temperature of 200℃ ,400℃ and 600℃ with a fixed working pressure of 2. 0Pa （group a）, and at the working pressure of 1. SPa, 2. 0Pa, 2. SPa, 3.0Pa and 5. 0Pa with a fixed substrate temperature of 600℃ （group b） were characterized by XRD analysis. The results showed that the thin films could develop a perovskite structure when the pressure was lower than 2. 5Pa and at a substrate temperature of 600℃. And at the pressure of 1.5Pa, the thin film grew with a （111）-preferred orientation. The best electrical values had been measured for the capacitor sample Pt/Ba0.7Sr0.3TiO3/Pt fabricated at the working pressure of 2. 5 Pa. And at an applied electric voltage of 4 V （the electric field was about 80 kV/cm）, the remnant polarization （Pτ） and coercive field （Ec） from the P-V loop measurements were about 2. 32 μC/cm^2 and 21. 1 kV/cm.
出处
《电子器件》
CAS
2008年第1期216-219,共4页
Chinese Journal of Electron Devices
基金
国家自然科学基金资助(60571009)
