晶向对SnO2：F透明导电玻璃特性的影响

The Effect of Orientation on the Properties of Transparent Conducting SnO_2: F Films

本文利用超声喷雾法制备了SnO2：F透明导电薄膜，SnCl4·5H2O与NH4F分别用作锡源与氟掺杂，玻璃衬底温度控制在360℃。X射线衍射仪、扫描电镜、紫外可见分光光度计与四探针仪分别用于表征样品的晶体结构、表面形貌、透光率与面电阻。研究结果表明：超声喷雾沉积的SnO2：F薄膜主要为四方晶系的多晶薄膜，并且随着沉积条件的改变，在（110）、（220）晶向出现不同程度的择优取向，其中在（200）晶向上择优取向生长的薄膜面电阻明显低于（110）晶向，最低可达到5Ω／□，所有样品透光率都较高，在450-1000nm范围内的平均透光率可达到80-90％。

Highly transparent and low-resistance SnO2 ： F films have been deposited by an ultrasonic spray pyrolysis process. SnCl4 · 5H2O and NH4F were used as tin source compound and for F doping, respectively. The temperature of substrates was about 360℃. An X-ray diffraction （XRD） unit was used for recording the XRD patterns. Surface morphology, optical transmittance and sheet resistance were examined and characterized. The XRD results show that the primary crystal structures of thin films are polycrystalline SnO2 tetragonal phase. The SnO2： F films, which deposited under different conditions, have different preferred orientation among （110）, （200）. The films with strong （200） orientations have the lowest sheet resistance at 5 Ω/□. All films are highly transparent and uniform. The average transmittance can reach 80 -90% at the wavelength range of 450-1 000 nm.