单壁碳纳米管场效应晶体管的制备工艺研究

Process Research of Preparing Single-Walled CNTFET

综述了碳纳米管场效应晶体管(CNTFET)的主要结构和导电沟道的制备工艺,如AFM探针操控、CVD原位生长、交流介电泳和L-B大面积操控排布等方法。在对CNTFET的这些结构和制备工艺进行详细分析的基础上,着重指出目前CNTFET导电沟道制备中存在的诸如金属性单壁碳纳米管(SWCNT)的烧除、接触电阻大、滞后现象以及p型CNTFET转化等问题,并针对这些问题提出了具体可行的解决方案。

The preparation process of structure and conducting channel in carbon nanotube field effect transistor （CNTFET） was reviewed, including AFM manipulation, CVD in-situ growth of single-walled carbon nanotube （SWCNT）, AC dielectrophoresis and L-B manipulation, etc. Based on the structures and preparation techniques, some existing problems were discussed, such as the burning down of metallic SWCNT, scale-down of Schottky barrier, elimination of hysteresis and the transfer of p-type CNTFET into n-type CNTFET. The specific solutions were proposed.