磁控溅射和氨化法生长GaN纳米棒及其特性

GaN Nanorods Grown by Magnetron Sputtering and Ammoniating Technology and Its Characteristic

使用一种新奇的稀土元素铽(Tb)作催化剂,通过氨化磁控溅射在Si(111)衬底上的Ga2O3/Tb薄膜,合成了大量的GaN纳米棒,氨化温度为950℃,氨化时间为15min。该方法可以进行持续合成且制备的GaN纳米棒纯度较高、成本低廉。实验后分别用扫描电子显微镜(SEM)、X射线衍射(XRD)、透射电子显微镜(TEM)、高分辨透射电子显微镜(HRTEM)和X射线光电子能谱(XPS)对样品进行了结构、表面形态和成分测试。通过XRD和XPS测试分析,合成的纳米棒具有六方纤锌矿GaN结构;通过SEM、TEM和HRTEM观察分析得出合成的纳米棒为单晶GaN纳米棒。简单讨论了GaN纳米棒的生长机制。

A novel rare earth seed Tb was employed for the growth of GaN nanorods. Large quantities of GaN nanorods were synthesized successfully through ammoniating Ga2O3/Tb films magnetron sputtered on Si （111） substrates, the ammoniating temperature was 950 ℃ and the ammoniating time was 15 min. The growth method allows a continuous synthesis and produces GaN nanorods at relatively high purity and low cost. After the experiment, the samples were tested by scanning electron microscopy （SEM） , X-ray diffraction （XRD） , transmission electron microscopy （TEM） , high-resolution transmission electron microscopy （HRTEM） , and X-ray photoelectron spectroscopy （XPS） . XRD and XPS investigations indicate that the nanorods are hexagonal wurtzite GaN. Observations by SEM, TEM and HRTEM show that as-prepared GaN nanorods possess the single-crystal structure. The growth mechanism of GaN nanorods was discussed briefly.