摘要
介绍了一种12位带内基准的电压输出型D/A转换器的电路实现原理、线路设计及其制作工艺特点。通过采用优化设计的R-2R电阻开关网络、温度补偿齐纳基准源和带JFET输入级的输出运算放大器等模拟电路单元,基于一种P阱5μm LC2MOS工艺,研制出该12位D/A转换器。它具有转换精度高、线性及微分误差小、功耗低、转换速度快、使用方便等优点。
A 12-bit voltage output D/A converter with a built-in reference source was presented. The operational principle, circuit design and characteristics of process technology were described. By using analog unit circuits, such as optimized R-2R resistor switching network, temperature compensation Zener reference source, and output operational amplifier with JFET input, a 12-bit D/A converter was developed based on a p-well 5μm LC^2 MOS process technology. The converter features high conversion resolution, small linear and differential error, low power consumption, fast conversion speed, and convenience for use.
出处
《微电子学》
CAS
CSCD
北大核心
2008年第1期64-67,共4页
Microelectronics
