退火对射频磁控溅射氧化锌薄膜性能的影响

Influence of Postdeposition Annealing on the Properties of ZnO Films Prepared by RF Magnetron Sputtering

采用射频磁控溅射技术在SiO2／Si上淀积高C轴取向的ZnO薄膜，在氧气和氩气的混合气氛、不同温度（400～900℃）下进行快速热退火处理。利用X-射线衍射（XRD）、原子力显微镜（AFM）、扫描电镜（SEM）和透射电镜（TEM）对薄膜结构、形貌与界面状态性能进行了分析。研究结果表明，ZnO薄膜的晶粒尺寸随着退火温度的升高而增大，衍射峰强度增强，峰位随之偏移；SEM分析显示薄膜呈柱状生长，表现出较好的C轴取向性；TEM分析表明ZnO与下电极Pt是呈共格生长，晶格匹配很好。

ZnO films were prepared on SiO2/Si substrate with high c-axis orientation by RF magnetron sputtering. Postdeposition rapid thermal annealing of ZnO films in Argon and Oxygen atmosphere,with different temperature form 400℃ to 900 ℃. X-ray diffraction（XRD）,atomic force microscope （AFM）,scanning electron microscopy （SEM）, transmission electron microscopy （TEM） and high-resolution electron were employed to analyze the influence of the postannealing treatment on the structural , morphology, and interracial state of ZnO thin films. It has been found that the grain size of ZnO thin films and the peak intensity increases with the annealing temperature increasing, and the shift of the diffraction peak postion from its normal powder value was observed. A cross-section view of ZnO thin films shows the columnar structure of ZnO thin films was proved to have a good parallel c-axis orientation. TEM analysis shows that ZnO is growed coherently with low-electrode Pt and the lattice fitting is very well.