摘要
采用普通固相合成法制备了Bi1-xGdxNbO4微波介质陶瓷,研究了N2烧结气氛下,Gd部分取代BiN-bO4陶瓷中的Bi对其烧结性能及微波介电性能的影响。结果表明,不同Gd掺杂量的样品,相结构差别不大,均以低温斜方相为主晶相。随着Gd含量的增加,陶瓷样品的烧结温度升高,表观密度和相对介电常数均略有减小,品质因数与频率之积(Q×f)值也会发生变化。当x(Gd)=0.008时,900℃烧结的Bi0.992Gd0.008NbO4陶瓷样品具有较好的介电性能:介电常数rε=43.6(4.3 GHz),Q×f=14 288 GHz(4.3 GHz),谐振频率温度系数τf≈0。
The Bi1-xGdxNbO4 microwave dielectric ceramics were prepared by conventional solid-state reaction method. The effects of Gd doping on the sintering and microwave dielectric properties of BiNbO4 ceramics sintered under N2 atmosphere were investigated. The difference of phase structure was not significant and all the samples exhibited the same orthorhombic phase as main phase. With the increased of Gd concentrations, sintering temperature increased, apparent density and relative dielectric constant er decreased. The Q×f values also changed with different Gd content. At a sintering temperature of 900℃, the Bi0.992Gd0.008 NbO4 ceramics exhibited good microwave dielectric properties of εr =43. 6（at 4. 3 GHz）, Q×f =14 288 GHz （at 4.3 GHz）, and τf≈0.
出处
《压电与声光》
CSCD
北大核心
2008年第1期121-123,共3页
Piezoelectrics & Acoustooptics
