全息光栅光刻胶掩模槽形演化及其规律研究

Study on the profile evolution of the photoresist grating mask and its law

为了控制全息光栅光刻胶掩模槽形,运用曝光模型和显影模型模拟了掩模的槽形形成过程和变化规律。实验对比了不同曝光量,不同显影浓度,不同空频条件下的掩模槽形,特别是占宽比(光栅齿宽度与光栅周期的比)的情况。实验结果表明,实际槽形与模拟槽形很接近。模拟和实验均发现,在大曝光量、高浓度显影、高空频的光栅条件下所得槽形占宽比较小,槽深主要由原始胶厚决定。

In order to control the profile of the photoresist grating mask,exposure and development models are applied to simulate the profile evolution and its law.Profile,especially the duty cycle,obtained in various exposure volume,developer concentration and spacial frequency are compared in experiments.Results show that the simulated profile agree very well with the real profile and duty cycle are smaller when more exposure volume,higher concentration developer and in higher special frequency,respectively.And groove depth is determined mainly by original thickness of photoresist.