掺锡氧化铟基底上锆钛酸铅铁电薄膜的制备与表征

Preparation and Characterization of Pb(Zr_xTi_(1-x))O_3 Thin Film on Indium Tin Oxide

用溶胶-凝胶工艺在掺锡氧化铟导电氧化物基底上制备了锆钛酸铅(PZT)铁电薄膜.采用快速热处理工艺改进铁电薄膜的晶格取向,用X射线衍射仪分析了薄膜的结晶取向,分别基于Al/PZT/ITO,ITO/PZT/ITO电容结构利用Sawyer-Tower电路原理测试了薄膜的铁电性能.结果表明,在磁控溅射法生长的ITO表面能够制备出具有钙钛矿结构的(110)取向的PZT铁电薄膜,所得薄膜的相对介电常数达到1000,剩余极化强度Pr达到和Pt基底上接近的15.2 uc/cm2,矫顽场强Ec达到70.8 kV/cm.并且利用TF Analyzer 2000铁电分析仪测试了PZT铁电薄膜的疲劳特性,发现ITO底电极上PZT薄膜经过108次反转后,剩余极化强度仅下降15%.研究表明:磁控溅射法制备的掺锡氧化铟透明导电薄膜ITO可以作为铁电薄膜的上下电极.

Pb（ZrxTi1-x ）O3 （PZT） lead zirconate titanate thin films were prepared and characterized on indium tin oxide （ITO） by sol-gel process. Crystal orientation of the film was improved by rapid thermal annealing process, and analyzed by X-ray diffraction. Also electrical properties of thin films were tested using the principle of Sawyer-Tower circuit based on Al/PZT/ITO and ITO/PZT/ITO capacitance structure respectively. The testing result shows that PZT thin films with the perovskite structure （110） oriention can be prepared on ITO, the relative dielectric constant of the film, as high as 1 000, was measured; strengths of remnant polarization and coercive fields of the film reached 15.2 uc/cm^2 and 70.8 kV/cm respectively. Using the TF Analyzer 2000, the fatigue properties of the PZT thin film on ITO were tested, and remnant polarization strength decreased only by 15% after 10^8 cycles. It is concluded that transparent conductive oxide thin film ITO prepared by magnetron sputtering can be served as the electrodes of PZT thin film.