Se薄膜封装层对OLED器件寿命的影响

Influence of Se Thin Film Encapsulation Layer on Lifetime of OLEDs

对于绿光OLED多层器件,在高真空条件下,利用真空蒸镀的方法,在各功能层蒸镀完成后,又在阴极的外面蒸镀了一层硒薄膜封装层,然后再按一般方法进行封装。对比了正常封装与增加Se薄膜封装层后器件的性能,对比实验中封装过程都未加干燥剂。研究发现未加Se薄膜封装层器件的半衰期为2880h,增加Se薄膜封装层器件的半衰期接近4000h,Se薄膜封装层的增加将器件的寿命延长了1.4倍;研究还发现Se薄膜封装层基本不影响器件的电流-电压特性、色坐标等光电性能。

Se thin film encapsulate layer was vaporized in vacuum room on the top of the alloy cathode quickly, on the condition of high vacuum, then the device was encapsulated with glass. The alloy cathode and organic material were protected, it can improve the stability of the device, prolong the lifetime obviously. Contrast test was adopted, it found that the lifetime of device without Se thin film encapsulated layer is about 2 880 h, the lifetime of device with Se thin film encapsulated layer is nearly 4 000 h, the lifetime of device was double by adding thin film encapsulated layer Se. And Se thin film encapsulated layer doesn＇t influence the performance of the device.