纤锌矿InxGa1-xN／GaN量子阱中的界面声子-电子相互作用

Electron-Interface-phonon Interaction in Wurtzite In_xGa_(1-x)N/GaN Quantum Wells

在介电连续模型下,运用传递矩阵的方法研究了任意层纤锌矿量子阱中界面光学声子的电声相互作用,得出了任意层纤锌矿量子阱中界面光学声子与电子相互作用的哈密顿。结果表明,在对称单量子阱GaN/InxGa1-xN/GaN中,界面声子-电子相互作用的耦合强度随组分x的变化差别很大;在对称单量子阱GaN/In0.8Ga0.2N/GaN中,不同的界面声子随着波数的变化对电声相互作用的贡献不同。

Within the framework of the dielectric-continuum model and Loudon＇s uniaxial crystal model, electron-phonon interaction Hamiltonian of the interface optical phonons in wurtzite multilayer heterostructures are solved by using the transfer-matrix method. The numerical results show that the coupling strength of electron-phonon interaction have a great difference as a function of x in an GaN/InxGa1-xN/GaN QW; in wurtzite GaN/In0.8 Ga0.2 N/GaN QW, it is dispersive of the interface phonons in different wave number, the lower-frequency modes are much more important for the electron-interface-phonon interactions than the higher-frequency modes.