摘要
制造了两种OLEDs器件,它们的结构分别为:ITO/NPB(50nm)/Alq3(65nm)/Mg∶Ag(10∶1)(100nm)/Ag(50nm)andITO/NPB(50nm)/Alq3(65nm)/LiF(x)/Al(100nm)。结果发现,在同样电压下,与Mg∶Ag/Ag电极相比,插入LiF层可以明显提高器件的电流。当LiF厚度为1nm时,器件性能最好。以Mg∶Ag/Ag合金作为电极时的器件的最大亮度为8450cd/m2,而插入LiF层的器件最大亮度可达到14700cd/m2。此外,器件的发光效率也得到了明显的提高,在7V时达到了最大为3.117cd/mA。同时,当LiF厚度大于1nm或小于1nm时,器件性能都将会下降。
Two kinds of OLEDs were fabricated. Their structures are respectively as follows: ITO/NPB(50 nm)/Alq3(65 nm)/Mg:Ag(10:1)(100 nm)/Ag (50 nm) and ITO/NPB (50 nm)/Alq3(65 nm)/LiF(x)/Al (100 nm). The results show that it can increase the current of device obviously by inserting LiF layer compared with Mg : Ag/Ag electrode at the same voltage. When the thickness of LiF layer is 1 nm, the performance is the best. Its maximal brightness can reach to 14 700 cd/m^2, while that of Mg:Ag/Ag alloy electrode device is only 8 450 cd/m^2. In addition, the luminous efficiency of the device mentioned above also has been obviously improved, and has reached to the maximum 3. 117 cd/mA under 7 V. Meanwhile, it is found that the performance will decrease along with the alteration of the thickness of LiF layer more or less than 1 nm.
出处
《液晶与显示》
CAS
CSCD
北大核心
2008年第1期52-57,共6页
Chinese Journal of Liquid Crystals and Displays
基金
Patent Industrialization Project of Shaanxi Province(No.2005ZZ-04)
Industrialization Project of Shaanxi Education Office(No.06JC23)
Patent Scientific Research Project of Shaanxi Education Office(No.07JK191)