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Properties of ITO:Zr films deposited by co-sputtering 被引量:1

Properties of ITO:Zr films deposited by co-sputtering
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摘要 ITO:Zr films were deposited on glass substrate by co-sputtering with an ITO target and a Zirconium target. Substrate temperature and oxygen flow rate have important influences on the properties of ITO:Zr films. ITO:Zr films show better crystalline structure and lower surface roughness. Better optical-electrical properties of the films can be achieved at low substrate temperature. The certain oxygen flow rates worsen the electrical properties but can enhance the optical properties of ITO:Zr films. The variation in optical band gap can be explained on the basis of Burstin-Moss effect.
出处 《Optoelectronics Letters》 EI 2008年第2期137-139,共3页 光电子快报(英文版)
基金 the Research Fund for Shanghai applied material (0525)
关键词 溅射 ZR 薄膜 结构 溅射 Zr 薄膜 结构
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同被引文献16

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