Ge纳米结构的制备技术与发光特性研究进展

Progress of the Fabricated Methods and Luminescent Properties of Ge Nanostructures

Si基纳米发光材料与器件的研究是目前半导体光电子技术领域中的一个活跃前沿.除了Si纳米晶粒、Si量子点和Si/SiO2超晶格等Si纳米结构之外,属于同族元素的Ge纳米结构也因其所具有的优异特性,而呈现出良好的发光性能.评述了Ge纳米结构的制备方法与发光特性在近年内取得的研究进展.

Recently, the study of the Si-based luminescent materials and devices has attracted much attention of semiconductor photoelectric technology. Except Si nanostructures, such as Si nanocrystals, Si quantum dots, Si/SiO2 superlattice, Ge nanostructures also exhibit efficient luminescence properties. In the paper, we mainly review the research progress of the fabricated mathods and their luminescent properties of various Ge nanostructures in recent years.