半导体桥结构设计分析

Analysis and Design of Semiconductor Bridge Structure

文章讨论了半导体桥点火的作用机理。在比较、分析了几种常用的半导体桥结构的基础上,设计出一种新的SCB结构。从理论上讲,此种结构具有更好的点火性能。文章以SCB的典型结构——"H"形为例,对半导体桥结构的各组成部分进行了分析,论证了半导体桥厚度δ=2μm的合理性;根据能量转换关系建立了数学模型,得出了半导体桥长和宽的计算公式。

The working mechanism of the semiconductor bridge （SCB） was discussed in this paper. Based on the analysis of several common semiconductor bridge structures, a new SCB structure was presented, and it was theoretically proved to have better ignition capability. Illustrating by a typical ＂H＂ shape SCB structure, each part of the bridge was analyzed. The rationality of bridge thickness δ=2μm was also proved. By establishing the mathematic model on energy transition relationship between the semiconductor bridge and the amorce, a formula to calculate the length and width of the semiconductor bridge was proposed.