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半导体桥结构设计分析 被引量:4

Analysis and Design of Semiconductor Bridge Structure
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摘要 文章讨论了半导体桥点火的作用机理。在比较、分析了几种常用的半导体桥结构的基础上,设计出一种新的SCB结构。从理论上讲,此种结构具有更好的点火性能。文章以SCB的典型结构——"H"形为例,对半导体桥结构的各组成部分进行了分析,论证了半导体桥厚度δ=2μm的合理性;根据能量转换关系建立了数学模型,得出了半导体桥长和宽的计算公式。 The working mechanism of the semiconductor bridge (SCB) was discussed in this paper. Based on the analysis of several common semiconductor bridge structures, a new SCB structure was presented, and it was theoretically proved to have better ignition capability. Illustrating by a typical "H" shape SCB structure, each part of the bridge was analyzed. The rationality of bridge thickness δ=2μm was also proved. By establishing the mathematic model on energy transition relationship between the semiconductor bridge and the amorce, a formula to calculate the length and width of the semiconductor bridge was proposed.
作者 金峰 康小明
出处 《爆破器材》 CAS 2008年第1期21-24,共4页 Explosive Materials
关键词 半导体桥 等离子汽化 点火药 semiconductor bridge, plasma vaporization, amorce
  • 相关文献

参考文献7

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共引文献28

同被引文献33

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