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离子注入法制备Si基量子点 被引量：2

Fabrication of Quantum Dots on Si Substrate by Ion Implantation
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摘要 利用离子注入法在Si(001)衬底上先后注入了In+和As-,注入能量分别为210,150keV,注入剂量分别为6.2×1016,8.6×1016cm-2,然后对样品经过退火处理制备出了量子点材料(为了避免沟道效应,注入角度选择为7°).用透射电子显微镜(TEM)和高分辨透射电子显微镜(HRTEM)观察了退火后量子点截面像,发现量子点的平均尺寸大小随退火温度和时间增加而增大. Silica （001） slice was implanted by In^＋ and As^- at 210 and 150 keV with doses of 6.2 × 10^16 and 8.6× 10^16 cm^-2 respectively. Then the quantum dots material was fabricated with subsequently annealing treatment（the implantation angle was 7° to avoid channel effect）. The implanted subsequent annealed samples were observed using a transmission electron microscope （TEM） and a high-resolution transmission electron microscope （HRTEM）. The TEM images show that the average size of quantum dots increases with the increasing temperature and time of annealing
作者 孟宪权 何亮 肖虎
机构地区 武汉大学物理科学与技术学院
出处 《武汉大学学报（理学版）》 CAS CSCD 北大核心 2008年第1期47-50,共4页 Journal of Wuhan University:Natural Science Edition
基金 国家自然科学基金资助项目(10775106和60676036)
关键词 量子点 离子注入 透射电子显微镜 退火 quantum dots implantation transmission electron microscopy anneal
分类号 TN304.051 [电子电信—物理电子学]
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参考文献11

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武汉大学学报（理学版）
2008年 第1期

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