石英光纤端面的化学机械抛光实验研究

Research on Polishing End Face of Silica Optical Fiber

将化学机械抛光（CMP）技术引入光纤端面的加工过程并设计其抛光工艺，探讨了抛光垫和抛光液的类型、浓度及抛光压力、抛光盘的转速及抛光液的流速等参数对抛光性能的影响，设定了两步抛光的优选工艺．结果表明：在颗粒浓度为1％～2％，抛光液流速为100～150mL／min，压力小于20．64kPa，抛光盘转速90r／min的条件下，可以得到较高的材料去除率和良好的抛光表面质量，其表面粗糙度Ra值可达0．326nm．

Chemical-mechanical polishing （CMP） was applied to fabricate the end face of fiber, and the polishing procedure was properly designed. The influence of polishing parameters such as polishing pad, the type and concentration of polishing slurry, polishing pressure, rotation speed and flowing rate of polishing slurry on the properties of polished surface was studied. A two-step polishing procedure was established, and the results showed that a high material removing ratio and perfect polishing surface were obtained under the parameters of particle concentration of 1% -2 % （wt.）, flowing rate of polishing slurry of 100 - 150 mL/min, pressure of less than 20.64 kPa, and rotation speed of 90 rpm. A perfect end surface with roughness of 0. 326 nm was achieved.