摘要
制备包含α-Fe2O3与SnO2的双层气敏薄膜，研究发现：Ar＋刻蚀可同时除去薄膜表面的物理吸附氧和化学吸附氧，剩下晶格氧，因而O1s的XPS谱图变得对称．
The bilayer film made of FCZO3 and SnOZ is studied. Argon ion sputtering can remove both phonical and chemical absorbed oxygen, and only lattice oxygen is left. So the O.. peak obtained from XPS is sylmnetric.
出处
《传感器技术》
CSCD
1997年第5期20-22,共3页
Journal of Transducer Technology
基金
国家自然科学基金
关键词
薄膜
刻蚀
导电机理
气敏薄膜
Thin film Etching Electrical conduction mechanism
