摘要
Plasma polymerized fluorocarbon （FC） films have been deposited on silicon substrates from dielectric barrier discharge （DBD） plasma of C4Fs at room temperature under a pressure of 25～125 Pa. The effects of the discharge pressure and frequency of power supply on the films have been systematically investigated. FC films with a less cross linked structure may be formed at a relatively high pressure. Increase in the frequency of power supply leads to a significant increase in the deposition rate. Static contact angle measurements show that deposited FC films have a stable, hydrophobic surface property. All deposited films show smooth surfaces with an atomic surface roughness. The relationship between plasma parameters and the properties of the deposited FC films are discussed.
Plasma polymerized fluorocarbon （FC） films have been deposited on silicon substrates from dielectric barrier discharge （DBD） plasma of C4Fs at room temperature under a pressure of 25～125 Pa. The effects of the discharge pressure and frequency of power supply on the films have been systematically investigated. FC films with a less cross linked structure may be formed at a relatively high pressure. Increase in the frequency of power supply leads to a significant increase in the deposition rate. Static contact angle measurements show that deposited FC films have a stable, hydrophobic surface property. All deposited films show smooth surfaces with an atomic surface roughness. The relationship between plasma parameters and the properties of the deposited FC films are discussed.
基金
National Natural Science Foundation of China(No.10405005)
