PNP和NPN型异质结双极晶体管的不同设计考虑

Different Considerations in the Design of PNP and NPN Heterojunction Bipolar Transistors

PNP和NPN高频异质结双极晶体管的设计有明显不同，这主要归因于砷化镓中电子与空穴的迁移率存在显著差别。这种差别在基区和子集电区外延层的设计中体现得尤为明显。文中详细讨论了PNP和NPN两种类型的异质结双极晶体管各自外延层的设计考虑。

There are notable differences in the design of NPN and PNP high frequency HBTs. These result primarily from the dramatic difference in the electronand hole mobilities of GaAs. This is especially apparent in the design of base andthe subcollector epitaxial layers. In this paper,different considerations in design ofPNP and NPN heterojunction bipolar transistors are discussed.