CuTCNQ有机薄膜器件的研究

Study of CuTCNQ Organic Thin Film Device

报道了采用CuTCNQ有机分子薄膜制作器件的尝试。在厚度为100nm的铜膜上，利用液相自蚀生长法制备得到CuTCNQ有机薄膜。不同生长温度及时间下，生长薄膜的形态结构不同，这表明时间和温度是影响CuTCNQ生长的重要因素。采用半导体器件平面制作工艺，制备出了金属—CuTCNQ—金属结构的二端器件，并进行了器件电学特性的测量，发现这种结构的CuTCNQ器件存在明显的整流特性。

Fabrication of electronic device using CuTCNQ organic thin films hasbeen described here. It has been shown that the reaction time and the reaction temperature are important factors which influence the growth of CuTCNQ. The growthexperiments were carried out on 100 nm thick Cu film reacted with TCNQ inCH3CN under different reaction time and temperature conditions. The prototype devices of metal-CuTCNQ-metal structure were fabricated by means of semiconductorplanar process. The results of electrical measurement reveal the rectifying characteristics of the devices.