开管镓扩散技术改善快速晶闸管通态特性

Improvement on the On-state Characteristics of Fast Thyristor by Using Open-tube Ga-diffusion

对提高快速晶闸管发射区ne与基区Pb杂质浓度比值Ne／Nb，降低器件通态压降进行了理论分析；叙述了开管Ga扩散技术的特点，并与闭管Ga扩散和B－A1双质P到扩散方式进行了比较。实验证明，用开管Ga扩散工艺制造快速晶闸管，可明显改善器件的通态伏安特性。

The decreasing of on-state voltage of high speed thyristor with raising of the ratio of emitter-region impurity concentration N. to base-region impurityconcentration Nb is theoretically analysed in this paper. The features of the opentube Ga-diffusion technology are described and compared with the close-tube Gadiffusion and B-Al diffusion. Experiment shows that the open-tube Ga-diffusiontechnology can improve the on-state characteristics of high-speed thyristor.