摘要
用MOCVD方法生长GaInP及其掺杂材料,并对Si的掺杂行为进行了较详细的研究。采用低温度冲层技术可有效地控制高温(>700℃)生长GaInP及其掺杂材料的组分,从而使得GaInP掺Si的电子浓度达8×1018cm-3。在此基础上,进行了GaInP发光二极管材料的生长,所得器件具有良好的I-V曲线。
GaInP grown bll MOCVD is studied with emphasis on high dopingbehaviour. The Iow-temperature-growth of GaInP layer is employed to control thecomposition of GaInP at higher temperatures (>700℃). Undoped GaInP exhibitsa residual background concentration of 1016 cm-3. SiH4 is used as Si donor sourceand n-type carrier concentrations of up to 8×1018 cm-3 have been obtained. On thebasis of the above studies, p-n GaInP homostructure light-emitting diodes grownon GaAs substrates have been fabricated and characterized by means of currentvoltage measurement. A forward-bias turn-on voltage of 1V and a breakdown voltage of 10 V are obtained.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1997年第3期286-290,共5页
Research & Progress of SSE