氢化非晶硅薄膜晶体管的静态特性研究

Study on the Static Characteristics of a-Si:H TFT's

发展了一种研究a－Si：HTFT静态特性的新方法。从a－Si材料的带隙态密度适配参数分布函数出发，采用Shockley－Read-Hall统计描述，发展了一种局域态电行密度统一模型，该模型同时考虑了带尾局域态和缺陷局域态的作用。提出并分析了沟道区有效温度参数的概念，在此基础上，推导出了a－Si：HTFT电流—电压特性的解析表达式。其理论值与实验值符合很好。并详细分析了a－Si材料参数对TFTN态特性的影响。

A new method is developed to describe the static characteristics of a-Si: H TFT' s. Based on an advanced distribution model of gap states in a-Si: H, amodel for the density of localized trapped charge is developed in consideration of defect and tail localized acceptor states. Using an effective temperature approach, thelocalized deep and tail states have been considered in the analytic drain current model. A good agreement between the theoretical result and the measured data has beenobtained and this model confirms the efficiency of this tool for the design of amorphous silicon integrated circuits.