一种快速有效拦截弹飞的单片机程序新方法

ASPECTS OF MAGNETOELECTRONICS

简要地分析了各种常用的计算机硬件、软件抗干扰措施，并针对受到干扰的单片机程序非正常地跳到可执行的ＲＯＭ区的这种情况，提出一种非常快速、有效的拦截方法。

In this article, a survey of the spin dependent polarization, spin dependent scattering and spin relaxation of the itinerant electrons are presented; the outstanding experimental results and theoretical models about the anisotropic magnetoresistance (AMR) in ferromagnet, the giant magnetoresistance (GMR) in magnetic multilayered and granular films, the colossal magnetoresistance (CMR) in oxides and the tunneling magnetoresistance (TMR) in magnetic valves (tunneling junctions) are reviewed in the frame of spin polarized transportation; and an introduction to the operation and performance of the newly born magnetoelectronic devices—the magnetoresistive random access memory (MRAM) and the full metal spin transistor is given in detail.