Ge_xSi_(1-x)/Si 超晶格 PIN 波导探测器电输运过程分析

Analysis of Electronic Transport of Ge x Si 1- x /Si Supplattic PIN Waveguide Photodetector

文章定性和定量地分析了ＧｅｘＳｉ１－ｘ／Ｓｉ超晶格ＰＩＮ波导探测器的电输运过程，具体说明了量子效率、光电流、频率响应带宽等重要参数的物理意义．并将理论分析与实验结果进行比较，结果表明，两者符合得较好．

In this paper electronic transport of GeSi/Si supperlattic PIN waveguide photodetector is analysed. The description of the physical meanings for quantum efficiency, photocurrent and bandwidth are presented. It is found that the theoretical analysis is well coincided with experimental results.