感应耦合等离子体刻蚀p-GaN的表面特性

Properties of p-type GaN etched by inductively coupled plasma and their improvement

研究了p-GaN材料经感应耦合等离子体(ICP)刻蚀后的表面特性,并用不同的方法对刻蚀表面进行处理.利用原子力显微镜(AFM)和X射线光电子能谱(XPS)对刻蚀样品进行分析,并在样品表面制作Ni/Au电极,进行欧姆接触特性的测试.实验结果表明了NaOH溶液处理表面对改善材料表面和欧姆接触特性是比较有效的.

Our preseut research was focused on the surface properies of the p-type gallium nitride （p-GaN） etched by inductively coupled plasma （ICP）. Different methods were used to process the etched surface. The surface condition was investigated by atomic force microscopy （AFM） and X-ray photoelectron spectroscopy （XPS）. The current voltage measurement was used to show the I-V characteristics of Ni/Au contacts on the sample. The experimental result demonstrated that the NaOH treatment is effective in improving the material surface and the ohmic contact properties.