摘要
采用射频磁控反应溅射在Si(100)衬底上制备了ZnO/AlN双层膜。使用X射线衍射仪、原子力显微镜(AFM)、LCR测试仪及荧光分光光度计等仪器对样品进行了结构、表面形貌、导电性及荧光光谱的测试,并与相同工艺下制备的ZnO单层薄膜进行了对比研究。结果表明,ZnO/AlN双层膜的c轴择优取向性优于单层ZnO薄膜,薄膜应力更小,且为压应力,晶粒尺寸大于单层膜,表面粗糙度较小,并且其电阻率更低。荧光光谱显示,ZnO/AlN双层膜的结晶质量更好。
ZnO/AlN bilayers were deposited on Si(100) subtrate by RF magnetron reactive sputtering. The structure, surface morphology, electrical resistivities and fluorescence spectrum of the ZnO/AlN bilayers were determined by using XRD, AFM, LCR HITESTER and fluoescence spectromter. Compared with ZnO/Si films prepared by using the same processing parameter, the ZnO/AlN bilayers, with a preferred orientation in c-axis, have a litter membrance stress and root-mean-square roughness, and a lower electrical resistivity. The fluorescence spectrum shows that the crystalline quality of ZnO/AlN bilayers is better than that of ZnO/Si films.
出处
《理化检验(物理分册)》
CAS
2008年第2期71-74,93,共5页
Physical Testing and Chemical Analysis(Part A:Physical Testing)
基金
安徽省自然科学基金(03044703)
安徽省红外与低温等离子体重点实验室(2007C002107D)
关键词
射频磁控反应溅射
缓冲层
表面形貌
电阻率
荧光光谱
RF magnetron reactive sputtering
Buffer layer
Surface morphology
Electrical resistivity
Fluorescence spectrum