磁控双靶共溅射磁致伸缩TbFe薄膜的研究

Study on Magnetostiction of TbFe Thin Films Deposited by Double-target Magnetion Co-sputtering

采用直流磁控双靶共溅射方法,在玻璃基片上制备了非晶态的TbFe磁致伸缩薄膜,研究了溅射功率、工作气压等工艺参数对薄膜成分的影响。研究结果表明:当溅射功率从20 W增加到100 W时,TbFe薄膜中Tb含量从35.77at%增加到44.54at%;工作气压从0.2 Pa增加到1.0 Pa时,TbFe薄膜中Tb含量从38.02at%增加到44.1at%。重点研究了真空退火处理对TbFe薄膜磁性及磁致伸缩性能的影响。结果表明,真空退火处理有利于提高平行于膜面的饱和磁化强度和磁导率;350℃真空退火60 min,在外加磁场为5 kOe条件下,TbFe薄膜的磁致伸缩系数可达到351×10-6。

Amorphous Tb-Fe thin films were deposited onto the glass substrate by magnetron co-sputtering method. The influences of the input power and argon pressure on the thin fill composition were studied. The results show that the input power and argon pressure can change the composition of the thin fill. The atomic content of Tb increases from 35.77at% to 44,54at% when the input power increases from 20W to 100W, and the atomic content of Tb increases from 38.02at% to 44.1at% when the argon pressure increases from 0.2 Pa to1.0 Pa. The effects of vacuum annealing on the magnetic and magnetostrictive properties of TbFe thin films were especially investigated, The tests reveal that the annealing treatment can significantly improve the in-plane saturated magnetization and permeability of TbFe thin films. Atter vacuum annealing 60 min at 350℃, the magnetostrictive coefficient of TbFe thin films can be up to 351×10^-6 under 5kOe external magnetic field.