一种改善快速晶闸管 dv/dt、di/dt 耐量的方法

A Method to Improve the d v /d t and d i /d t Capabilities of a Fast Switching Thyristor

分析了借助镓高斯函数浓度分布改善快速晶闸管ｄｖ／ｄｔ、ｄｉ／ｄｔ耐量的机理，并给出实验结果。

The improvement on the d v /d t ,d i /d t capabilities of a fast switching thyristor is studied with the Ga gaussian distribution,and experimental results are given.