四(4-氨基苯基)卟啉及其金属配合物的表面光电压性能的研究

Photoconductivity Research of Teta(4-aminophenyl)Porphyrin and Its Metalloporphyrin Complexes

以对硝基苯甲醛和吡咯为原料,硝基苯为溶剂,反应合成了四(4-硝基苯基)卟啉(TNPP),将TNPP用二氯化锡还原后得到了四(4-氨基苯基)卟啉(TAPP),并进一步用TAPP与金属盐反应合成了其金属配合物。利用紫外可见光谱、红外光谱、核磁共振氢谱对合成产物进行了结构表征。并研究了这些卟啉化合物在不同外加电场条件下的表面光电压谱(SPS),结果表明,TAPP及其金属配合物都具有良好的光电性能,且其Soret带与Q带的光伏响应强度随外加正电场光伏响应强度的增加而增强,随外加负电场光伏响应强度的增加而减弱,具有P-型半导体的特征。

Tetra （4-nitrophenyl） porphyrin （TNPP） was synthesized in nitrobenzene, using 4-nitro- benzaldehyde and pyrrole as starting materials. Tetra （4-aminophenyl） porphyrin （TAPP） was synthesized by the reduction of TNPPwith SnCl2/HC1. Then metallo-porphyrin complexes were synthesized from TAPP and metal salts. The products were characterized by UV-vis, IR and 1H NMR spectrum. The surface photovoltage of the products were studied by surface photovoltage spectra （SPS） in different electric fields. It was shown that TAPP and its metalloporphyrin complexes all had good photoconductivity. The surface photovoltage response in tensity of Soret band and Q band were enhanced with an external positive electric field and weakened with a negative electric field, andpossessed the characteristic of p-type semiconductor.