两步法制备SnS光电薄膜及其性能

Preparation and characteristic of SnS films by a two-stage process

用两步法在ITO玻璃基片上制备SnS薄膜,即先在ITO玻璃基片上热蒸发一层Sn膜,然后在一定的温度和时间下在真空系统中进行硫化。在优化工艺条件下制备出附着力好的薄膜,通过扫描电子显微镜、X射线衍射、分光光度计等手段观察和分析测试,表明该薄膜是正交结构的SnS,薄膜表面致密,颗粒大小均匀。根据薄膜的反射光谱和透射光谱,计算得到其在吸收边的吸收系数α>5×104cm-1,直接带隙Eg=1.48eV,适合于作为太阳能电池的吸收层材料。

SnS films were prepared by a two - stage process . This process included the deposition of Sn thin films on the ITO -film -coated glass substrates by thermal evaporation and sulphurisation of the Sn thin films in a vacuum system at certain temperature and time. The SnS films have good adhesion to the substrates in the optimum conditions. The films were characterized with X - ray diffraction, scanning electron microscopy and spectrophotometer analysis. It is indicated that the films are SnS of polycrystalline with orthorhombic structure and they are uniform and dense. According to their reflection and transmission spectrum, absorption coefficient in the absorption edge is greater than 5×10^4cm^-1, and their direct band gap is estimated to be around 1.48eV. The films are suitable as absorption layers of solar cells.