PECVD法制备纳米晶粒多晶硅薄膜

Preparation of nano-grain poly-silicon thin films by PECVD

采用射频等离子体增强化学气相沉积系统（RF-PECVD）以高纯SiH4为气源在P型〈100〉晶向单晶硅片上、衬底温度600℃、射频（13.56MHz）电源功率50W时沉积非晶硅薄膜,利用高温真空退火制作纳米晶粒多晶硅薄膜。采用X射线衍射仪（XRD）、Raman光谱、AFM测量和分析薄膜微结构及表面形貌,实验结果表明,退火温度为800℃时非晶硅薄膜晶化,形成择优取向为〈111〉晶向的多晶硅薄膜;退火温度增加,Raman谱TO模和TA模强度逐渐减弱;AFM给出800℃退火后薄膜晶粒明显细化,形成由20~40nm大小晶粒组成的多晶硅薄膜,薄膜晶粒起伏程度明显减弱。

Adopted radio frequency plasma enhanced chemical vapor deposition system （ RF - PECVD） , and high pure SiH4 as air- source separately, so that deposited polycrystalline silicon thin films on P - type 〈 100 〉 single silicon, when temperature of underlay is at 600℃ and electrical power of emitting - frequency 13.56MHz is 50W, adopted high temperature and vacuum -annealing to fabricate amorphous silicon thin films of nanometer crystalline grains. Took advanced of X - ray Diffraction Apparatus （XRD） .Raman Spectrum .and AFM to measure and analyze thin -film micro -structure and surface appearance. The result of the experiment shows that the polycrystalline silicon thin films crystallized, when the annealing temperature was at 800℃, and then formed 〈 111 〉 polycrystalline silicon thin films of seo lective better direction; with increasing temperature, intensity of Raman Spectrum TO and TA films weakens gradually; AFM gives that thin -film crystalline grains become significantly slender after 800℃ annealing, and formed polycrystalline films of grain sizes from 20 to 40nm, ups and downs degree of thin -film crystalline grains weakened significantly.