一种新型MEMS温度传感器的设计

The Design of A Novel MEMS Temperature Sensor

本文提出了一种新型的多层梁结构的电容式温度传感器。传感器结构部分是由导体(或半导体)/介质层/导体(或半导体)组成的可变电容器。电容的上下极板分别为金属和衬底硅,中间介质层为二氧化硅层。与传统的温度传感器相比,这种结构的测温范围较宽。文中,应用多层梁理论模型分析了传感器的结构,并利用ANSYS有限元分析对模型进行了验证。当多层梁材料参数已知的情况下,选用大面积,低厚度,能够最大限度的提高传感器性能。

A novel capacitive temperature sensor employing a sandwich structure is presented. The sensing part is a variable capacitor with a conductor （or semiconductor）/dielectric/conductor （or semiconductor） structure. The top and bottom layers are metal and Si respectively, while the center layer is SiO2. Compared with the traditional temperature sensor, this structure has a wider measuring range. In this paper, mechanical thermal model of the multi -layers was used to analyse the sensor structure, which was also simulated by ANSYS. Larger area and thinner thickness can improve the performance.