摘要
为在Pyrex玻璃基片上湿法腐蚀出易于金属化(如电镀等)的深凹坑(或凹槽),选用HF:HNO3:H2O为腐蚀液,分别以Cr/Au(30nm/300nm,溅射)加光刻胶(15μm)和Cr/Pt(30nm/300nm,溅射)加光刻胶(15μm)作为掩膜进行腐蚀实验。实验发现在Cr/Pt/光刻胶掩膜下,Pyrex玻璃的腐蚀凹坑横向钻蚀小(钻深比1.34:1),侧壁倾斜光滑,并在凹坑(深约28μm)内成功地电镀了焊盘。该实验结果对要求高深宽比沟槽的微流体器件的制造也有一定参考意义。
Wet etching deep pits or grooves, required for metallization such as electroplating, on Pyrex 7740, is studied. In the wet etching experiment, HF:HNO3:H2O as etching solution, and Cr/Pt or Cr/ Au sputtering deposited, in combination with photoresist ( PR), as etching mask, were investigated. The experiment has shown that Cr/Pt/PR (30nm/300nm/15μm) was found to be ideal etching mask for etching pits required for metallization. The etched pits, in depth of near 28μm, with smooth surface and small ratio ( about 1.34 : 1 ) of undercut to deepness, were obtained. And, in these etched pits, Cu pads for soldering were successfully electroplated. These experiment results can be used to fabricate high ratio aspect of grooves in some micro fluid devices.
出处
《功能材料与器件学报》
CAS
CSCD
北大核心
2008年第1期236-240,共5页
Journal of Functional Materials and Devices
基金
武器装备预研基金(9140A09020706JW0314)
国家自然科学基金(No.60402003)