射频磁控溅射工艺制备二氧化钒薄膜

Preparation of Vanadium Dioxide Thin Film by RF Magnetron Sputtering Method

以V2O5陶瓷烧结靶材及射频磁控溅射工艺制备V2O5薄膜,再经氩气气氛退火处理得到VO2薄膜。采用扫描电子显微镜观察不同制备条件下薄膜表面微观形貌特征,拉曼光谱和X射线光电子能谱用来分析确定退火前后薄膜的物相结构及化合价态。结果表明,溅射4h、450℃退火2h制备的薄膜结晶形态良好,VO2纯度高于94%原子分数。

V2O5 thin films were prepared by RF magnetron sputtering method with V2O5 ceramic target, which were reduced into VO2 thin films annealed in argon atmosphere at 450℃. The films＇surface microtopography was studied by SEM, Raman spectroscopy and XPS ascertained the microstructure and valence state of the thin films. The results indicate that the films exhibit good crystalline states under the conditions of sputtering for 4h and annealing for 2h, the content of VO2 is more than 94at%.