半导体硅熔体电导率的间接测量

Indirect Measurement of Conductivity of Silicon Melt

本文通过在磁场下测定硅熔体的粘度,根据ηeff=（μBb）2σ关系式,间接计算出硅熔体的电导率。其结果与用其他方法测试的数值吻合。用电子导电、离子导电的变化,解释了硅熔体在1420～1690℃范围电导率的变化,研究结果对指导大直径硅单晶生长具有实际意义。

The conductivity was calculated by measuring the viscosity of silicon melt in the magnet field and according to the relationship of ηelf = （μBb）2σ. The results were consistent with the value reported by other method. The variety of silicon melt conductivity at the range of 1420℃ to 1690℃ was explained with the variety of electrons and ions. This work is significant to the growth of large diameter silicon.