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Influence of preparation methods on photoluminescence properties of ZnO films on quartz glass 被引量：2

Influence of preparation methods on photoluminescence properties of ZnO films on quartz glass
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摘要 The influence of preparation methods on the photoluminescence properties of ZnO film was studied.Two methods were applied to fabricate ZnO films in a conventional pulsed laser deposition apparatus.One is high temperature(500-700 ℃)oxidation of the metallic zinc film that is obtained by pulsed laser deposition.The other is pulse laser ablation of Zn target in oxygen atmosphere at low temperature(100-250 ℃).The photoluminescence property was detected by PL spectrum.The room temperature PL spectra of the ZnO films obtained by oxidation method show single violet luminescence emission centered at 424 nm(or 2.90 eV)without any accompanied deep-level emission and UV emission.The violet emission is attributed to interstitial zinc in the films.Nanostructure ZnO film with c-axis(002)orientation is obtained by pulsed laser deposition.The ZnO film deposited at 200 ℃ shows single strong ultraviolet emission.The excellent UV emission is attributed to the good crystalline quality of the film and low intrinsic defects at such low temperature. The influence of preparation methods on the photoluminescence properties of ZnO film was studied. Two methods were applied to fabricate ZnO films in a conventional pulsed laser deposition apparatus. One is high temperature （500-700℃） oxidation of the metallic zinc film that is obtained by pulsed laser deposition. The other is pulse laser ablation of Zn target in oxygen atmosphere at low temperature （100-250 ℃）. The photoluminescence property was detected by PL spectrum. The room temperature PL spectra of the ZnO films obtained by oxidation method show single violet luminescence emission centered at 424 nm （or 2.90 eV） without any accompanied deep-level emission and UV emission. The violet emission is attributed to interstitial zinc in the films. Nanostructure ZnO film with c-axis （002） orientation is obtained by pulsed laser deposition. The ZnO film deposited at 200 ℃ shows single strong ultraviolet emission. The excellent UV emission is attributed to the good crystalline quality of the film and low intrinsic defects at such low temperature.
作者 赵磊 连建设 刘玉华 蒋青
机构地区 Key Laboratory of Automobile Materials
出处 《中国有色金属学会会刊：英文版》 EI CSCD 2008年第1期145-149,共5页 Transactions of Nonferrous Metals Society of China
基金 Project(2004CB619301)supported by the National Basic Research Program of China Project supported by 985-Automotive Engineering of Jilin University
关键词 ZNO薄膜 脉冲激光 光激发光 石英玻璃 nanostructure ZnO film pulsed laser deposition photoluminescence
分类号 TB43 [一般工业技术]
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参考文献22

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同被引文献35

  • 1范希梅,连建设,郭作兴,蒋青.Surface morphology and photoluminescence properties of ZnO thin films obtained by PLD[J].中国有色金属学会会刊：英文版,2005,15(3):519-523. 被引量：3
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中国有色金属学会会刊：英文版
2008年 第1期

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