摘要
通过化学腐蚀方法研究了LiTaO3(LT)晶片的化学机械抛光的化学腐蚀机理,研究了LiTaO3单晶的化学机械抛光过程腐蚀作用的主要影响因素及其影响规律,获得了LiTaO3晶片CMP过程有效的氧化剂和稳定剂。采用X衍射测量抛光表面的结构变化,分析了晶片表面在不同抛光液条件下发生的变化。研究结果为优化LiTaO3CMP工艺参数,进一步探讨化学机械抛光机理提供了依据。
The material removing mechanism in the LiTaO3 （LT） CMP process was studied with chemical erosion method. The main influencing factors and the working rules of the chemical erosion in the LiTaO3 CMP process were discussed. The effective oxidant and stabilize agent were selected according to the experiment results. The structure changes of the polished surfaces with different slurries were observed with the X-diffraction. The outcome is useful for optimizing the CMP parameters and also studying the CMP process further.
出处
《半导体技术》
CAS
CSCD
北大核心
2008年第3期242-244,共3页
Semiconductor Technology
基金
广东省自然科学基金资助项目(5001807)
广东省科技计划资助项目(2005B10201019)
