期刊文献+

WSix沉积前清洗中一种失效现象及改进方法 被引量:1

Failure Mechanism and Improvement of WSi_x Pre-Clean for Deposition
下载PDF
导出
摘要 研究并讨论了在WSix制备的前清洗中,用气态氟化氢(HF)清洗时,多晶硅表面有从其体内析出的含磷物,这种析出物很容易跟气态HF中的微量水汽结合,形成HPO3晶体。这样的晶体在Si片表面不容易被检测到,却可以很大程度地影响芯片的良率。本系统观测了这一现象,解释了这种失效的机制,并且给出这种失效模式的解决方案。 A failure mechanism during WSix pre clean was researched and discussed. The P atoms in doped polysilicon diffuse out and oxidize in the air. They combine with the water vapor to form HPO3 crystal. These defects can't be removed during VHF clean and are covered by the WSix film. This can induce severe yield loss. The failure mechanism was demonstrated for the first time and an improvement methods of WSix pre clean process were given.
出处 《半导体技术》 CAS CSCD 北大核心 2008年第3期245-247,256,共4页 Semiconductor Technology
关键词 硅化钨沉积 磷析出 沉积前清洗 WSix deposition P out diffuse pre clean for deposition
  • 相关文献

参考文献2

  • 1庄达人.VLSI制造技术[M].中国台湾:高立图书有限公司,2002:272-276.
  • 2OKORN-SCHMIDT H F, Characterization of silicon surface preparation processes for advanced gate dielectrics [J]. IBM J Res Develop, 1999, 43 (3) : 351-365.

同被引文献6

引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部