微波单片电路中通孔的建模

Modeling Via Hole Structure in MMIC

分析了理论公式在计算截圆锥通孔电感中的局限性。设计了频率在20GHz以下GaA8基微波单片电路中通孔的专门测试结构并建立了其对应的等效电路，用去嵌入寄生参数的方法和安捷伦公司标准的IC-CAP建模系统提取了通孔的模型参数。发现对截圆锥结构的通孔，用公式计算出来的通孔的电感值比实验的结果大36％。设计了一个14～18GHz、增益大于17dB、输出功率为1W的GaAs基微波单片电路，验证了模型的准确性。

The limitation of the theoretical formula was analyzed for calculating the inductance of colum via hole. A peculiar measurement structure of via hole in GaAs-based MMIC was designed with frequency lower than 20 GHz. The equivalent circuit of the measurement structure was given. The modeling parameter of via hole was extracted by the de-embedding method and IC-CAP software. It is proved that the inductance of via hole in theory is 36% larger than that from experiments. A 14- 18 GHz GaAs-based MMIC was designed, the gain of which is lager than 17 dB with 1W output power. The accuracy of the model was validated by the GaAs-based MMIC.