深槽TVS研究

The Research of Trench TVS

以静电放电(ESD)以及其他一些电压浪涌形式随机出现的瞬态电压,通常存在于各种电子器件中。随着半导体器件日益趋向小型化、高密度和多功能,电子器件越来越容易受到电压浪涌的影响,甚至导致致命的伤害。从静电放电到闪电等各种电压浪涌都能诱导瞬态电流尖峰,瞬态电压抑制器(TVS)通常用来保护敏感电路受到浪涌的冲击。基于不同的应用,瞬态电压抑制器可以通过改变浪涌放电通路和自身的箝位电压来起到电路保护作用。为了节省芯片面积,并且获得更高的抗浪涌能力,深槽TVS的概念已经被提出和研究。深槽TVS的结面形成于纵向的深槽的侧壁,这样,在相同的芯片面积下,它有更多的有效结面积,即更强的放电能力。我们也可以预见,深槽TVS的小封装尺寸对应用于保护高端IC非常关键。

Random electrical transients, in the form of electrostatic discharge （ESD）, and other voltage surges have always existed in electronic systems. Due to the increasing complexities of semiconductors and other devices, these systems have become increasingly sensitive to voltage surges, which can be highly destructive. Common forms of voltage surges range from ESD to lightning induced electrical spikes. Transient Voltage Suppressor （TVS） devices are commonly used to help protect sensitive electronics from these random electrical transients. Depending on the application, TVS devices can be used to redirect or clamp electrical transients, thus protecting the semiconductors and other components of the system.As to save chip area and achieve larger capability of voltage surge discharge, the concept of Trench TVS has been raised and studied to some degree. The junction area of a trench TVS has changed from planar to vertical, that is the sidewall of the trench, thus more effective junction area with same chip size. It is also foreseeable that trench TVS be very essensial to ultra small packaging in the use of protection of high-end IC devices.