摘要
在优化多电平变换器系统性能时必须建立变换器开关损耗模型。通过一些特征参数来表征器件的开关波形,并根据开关波形产生的内在机理分别拟合逼近三电平变换器中快恢复二极管和IGBT的真实开关波形。另外,在分析二极管钳位型三电平变换器半导体器件开通、关断机理的基础上,建立了此类变换器的开关损耗计算模型。实验验证了二极管钳位型三电平变换器的器件开关模型和开关损耗模型的正确性和有效性。
The designer of multilevel converter must model the switching losses of converter switches to optimize the performance of system. The turn-on or turn-off behaviors of devices are characterized by some parameters. Representative waveform expressions of fast recovery diode and IGBT, which are derived based on the inherent mechanism using these parameters, are presented in this paper. Moreover, the switching losses models are also set up based on the knowledge of turn-on and turn-off principles in diode-clamped three-level converter. The simulation and experimental results demonstrates the validities of these models of the semiconductor devices.
出处
《电工技术学报》
EI
CSCD
北大核心
2008年第2期68-75,共8页
Transactions of China Electrotechnical Society
基金
安徽大学人才队伍建设资助项目(0220314)
关键词
三电平变换器
特性参数
开关模型
开关损耗
Three-level converter, characteristic parameters, turn-on or turn-off model, switching losses
