IDT6116单粒子敏感性评估试验技术研究

Study on IDT6116 Single-Event Effect Sensitivity Evaluation Testing Technology

为评估IDT6116 SRAM单粒子敏感性,采用地面试验方法和地面试验系统,利用脉冲激光、重离子和252Cf源3种不同的地面模拟源,对IDT6116 SRAM器件进行单粒子敏感性试验研究,并对3种不同的模拟源的试验结果进行等效性分析比较,同时进行总剂量效应对单粒子效应影响的试验研究。研究结果表明:IDT6116 SRAM抗单粒子翻转和锁定的能力较强;接受一定辐照剂量后的试验样品对单粒子翻转更加敏感,且翻转阈值略有降低,翻转截面略有增大。

Using single-event effect（SEE） sensitivity evaluation test method and test system as well as three kinds of simulation sources（pulsed laser,heavy ion and ^252Cf）,the SEE sensitivity of IDT6116 SRAM was experimentally researched.A comparison of testing results＇ equivalent for three kinds of simulation sources was performed.In addition,the influence of total dose effects on SEE was also researched.It is seem that occurred single-event upset probability is very little and the resistence to SEE is better for IDT6116 SRAM.