Te掺杂n型GaAs材料的光致发光研究

Photoluminescence of n Type Te doped GaAs 

对Ｔｅ掺杂ｎ型ＧａＡｓ材料在３００～６０Ｋ之间的辐射复合进行光致发光（ＰＬ）研究。用发射波长为５１０．６ｎｍ和５７８．２ｎｍ的溴化亚铜激光器为激发光源。在所选取的狭缝宽度下谱仪的分辨率约为２ｎｍ。所提供的数据全部经过系统灵敏度校正并进行分峰拟合。对ＰＬ谱中一些主要特征进行讨论，认为Ｔ１，Ｔ２，Ｔ３三个发射带分别对应着导带价带（Ｔ１）和施主受主（Ｔ２，Ｔ３）的跃迁，它们随温度变化的情况与带隙宽度及电子填充状态随温度变化有关。此外，还注意到ＰＬ谱的长波端（～９５０ｎｍ）呈上扬趋势。

The radiative recombination in n type GaAs doped with Te has been studied by photoluminescence (PL) at 300～60 K.A cuprous bromide (CuBr) laser with excitation wavelengths at 510.6 nm and 578.2 nm was employed for the excitation.The resolution of the spectrophotometer is about 2 nm at the slit width used in this work.The data were then subjected to sensitivity correction and curve fitting.Three emission bands have been assigned as transition of the conduction band valence band (T 1),and donor acceptor transition (T 2 and T 3).The temperature dependence of peak energy and relative intensity have been investigated.The PL spectra in the longer wave region (～950 nm) have an ascending trend.It is suggested that there is wide emisson band related with the recombination of deep energy level in low energy region.